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UNISONIC TECHNOLOGIES CO., 88CXX
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
3
CMOS IC
2
1
DESCRIPTION
The UTC 88CXX series is a high-precision voltage detector developed and foundry using CMOS process. The detection voltage is fixed internally, with an accuracy of 2.0%. The CMOS output is available. Besides, 88CXX can easily delay a release signal by attachment of an external capacitor with built-in delay circuit.
5 4
SOT-25
FEATURES
* High-precision detection voltage: 2.0% * Hysteresis characteristics: 5% typ * Ultra-low current consumption satisfied various detection voltage, 1.0 A typ. (VDD=2.0V) for 1.4V and 1.2 A typ. (VDD=3.5V) for 1.5V. * Available detection voltage from 1.1~6.0V and step by 0.1V. * Low operating voltage based on detection voltage, 0.8~6.0V for for 1.4V and 0.95~10V for 1.5V. * Delay time setting by an additional external capacitor.
*Pb-free plating product number: 88CXXL
PIN CONFIGURATION
PIN NO. 1 2 3 4 5 PIN NAME OUT VDD VSS NC CD
ORDERING INFORMATION Order Number Lead Free Normal 88CxxL-AF5-R 88Cxx-AF5-R Package SOT-25 Packing Tape Reel
xx: Output Voltage, refer to Marking Information.
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MARKING INFORMATION
PACKAGE VOLTAGE CODE 36:3.6V 11:1.1V 37:3.7V 12:1.2V 38:3.8V 13:1.3V 39:3.9V 14:1.4V 40:4.0V 15:1.5V 41:4.1V 16:1.6V 42:4.2V 17:1.7V 43:4.3V 18:1.8V 44:4.4V 19:1.9V 45:4.5V 20:2.0V 46:4.6V 21:2.1V 47:4.7V 22:2.2V 48:4.8V 23:2.3V 49:4.9V 24:2.4V 50:5.0V 25:2.5V 51:5.1V 26:2.6V 52:5.2V 27:2.7V 53:5.3V 28:2.8V 54:5.4V 29:2.9V 55:5.5V 30:3.0V 56:5.6V 31:3.1V 57:5.7V 32:3.2V 58:5.8V 33:3.3V 59:5.9V 34:3.4V 60:6.0V 35:3.5V MARKING
CMOS IC
5 CXXX 1 2
4
Space:Pb/Sn L:Pb-free Voltage Code
SOT-25
3
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88CXX
ABSOLUTE MAXIMUM RATINGS (Ta=25 , unless otherwise specified.)
PARAMETER Power Supply Voltage CD terminal Input Voltage Output Voltage Output Current Power Dissipation Operating Temperature Storage Temperature 1.4V 1.5V SYMBOL VDD-Vss VCD VOUT IOUT PD TOPR TSTG RATINGS 8 12 VSS-0.3 ~ VDD +0.3 VSS-0.3 ~ VDD+0.3 50 150 -40 ~ +85 -40 ~ +150
CMOS IC
UNIT V V V mA mW
ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified.)
PARAMETER Detection Voltage Hysteresis Width Operating Voltage 1.4V 1.5V 1.1V ~ 1.4V 1.5V ~ 2.6V 2.7V ~ 3.9V 4.0V ~ 5.4V 5.5V ~ 6.0V 1.1V ~ 1.4V 1.5V ~ 2.6V 2.7V ~ 3.9V 3 4.0V ~ 5.4V Output Current 5.5V ~ 6.0V 1.1V ~ 1.4V 1.5V ~ 2.6V 2.7V ~ 3.9V 4.0V ~ 5.4V 5.5V ~ 6.0V 1.1V ~ 1.4V 1.5V ~ 2.6V 2.7V ~ 3.9V 4.0V ~ 5.4V 5.5V ~ 6.0V IOUT SYMBOL -VDET VHYS VDD TEST CIRCUIT 1 1 1 VDD=2.0V VDD=3.5V VDD=4.5V VDD=6.0V VDD=7.5V VDD=0.95V VDD=1.20V VDD=1.20V Nch VDD=2.40V VDS=0.5V VDD=1.20V VDD=2.40V VDD=1.20V VDD=2.40V VDD=4.8V Pch(CMOS VDD=4.8V output) VDD=4.8V VDS=0.5V VDD=6.0V VDD=8.4V VDD=4.5V, CD=4.7nF VDD=4.5V, CD=4.7nF VDD=4.5V, CD=4.7nF VDD=7.0V, CD=4.7nF VDD=7.0V, CD=4.7nF TEST CONDITIONS MIN TYP MAX -VDET x1.02 -VDET x0.08 6.0 10.0 2.5 3.0 3.3 3.8 4.2 UNIT V V V
Current Consumption
ISS
2
4
Delay Time
td
5
-VDET -VDET x0.98 -VDET -VDET x0.03 x0.05 0.8 0.95 1.0 1.2 1.3 1.5 1.6 0.03 0.25 0.23 0.50 0.23 0.50 1.60 3.70 0.23 0.50 1.60 3.70 0.23 0.50 1.60 3.70 0.36 0.62 0.36 0.62 0.36 0.62 0.46 0.75 0.59 0.96 4.95 6.6 4.95 6.6 4.95 6.6 3 4 3 4
A
mA
8.25 8.25 8.25 5 5
ms
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CIRCUIT TEST CONDITIONS -VDET =1.1V -VDET =1.2V -VDET =1.3V -VDET =1.4V -VDET =1.5V -VDET =1.6V -VDET =1.7V -VDET =1.8V -VDET =1.9V -VDET =2.0V -VDET =2.1V -VDET =2.2V -VDET =2.3V -VDET =2.4V -VDET =2.5V -VDET =2.6V -VDET =2.7V -VDET =2.8V -VDET =2.9V -VDET =3.0V -VDET =3.1V -VDET =3.2V -VDET=3.3V -VDET =3.4V -VDET =3.5V -VDET =3.6V -VDET =3.7V -VDET =3.8V -VDET =3.9V -VDET=4.0V -VDET=4.1V -VDET=4.2V -VDET=4.3V -VDET=4.4V -VDET=4.5V -VDET=4.6V -VDET=4.7V -VDET=4.8V -VDET=4.9V -VDET=5.0V -VDET=5.1V -VDET=5.2V -VDET=5.3V -VDET=5.4V -VDET=5.5V -VDET=5.6V -VDET=5.7V -VDET=5.8V -VDET=5.9V -VDET=6.0V MIN TYP 0.19 0.20 0.22 0.24 0.18 0.19 0.20 0.21 0.22 0.24 0.25 0.26 0.27 0.28 0.29 0.31 0.32 0.33 0.34 0.35 0.36 0.38 0.39 0.40 0.41 0.42 0.44 0.45 0.46 0.47 0.48 0.49 0.51 0.52 0.53 0.54 0.55 0.56 0.58 0.59 0.60 0.61 0.62 0.64 0.65 0.66 0.67 0.68 0.69 0.71
CMOS IC
MAX
UNIT
Temperature Characteristic of -VDET
-VDET Ta
1
0.57 0.60 0.66 0.72 0.54 0.57 0.60 0.63 0.66 0.72 0.75 0.78 0.81 0.84 0.87 0.93 0.96 0.99 1.02 1.05 1.08 1.14 1.17 1.20 1.23 mV/ 1.26 1.32 1.35 1.38 1.41 1.44 1.47 1.53 1.56 1.59 1.62 1.65 1.68 1.74 1.77 1.80 1.83 1.86 1.92 1.95 1.98 2.01 2.04 2.07 2.13 4
QW-R502-040,A
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88CXX
DECTECTION VOLTAGE RANGE vs HYSTERESIS WIDTH
DETECTION VOLTAGE RANGE (V) 1.1V2.0% 1.2V2.0% 1.3V2.0% 1.4V2.0% 1.5V2.0% 1.6V2.0% 1.7V2.0% 1.8V2.0% 1.9V2.0% 2.0V2.0% 2.1V2.0% 2.2V2.0% 2.3V2.0% 2.4V2.0% 2.5V2.0% 2.6V2.0% 2.7V2.0% 2.8V2.0% 2.9V2.0% 3.0V2.0% 3.1V2.0% 3.2V2.0% 3.3V2.0% 3.4V2.0% 3.5V2.0% HYSTERESIS WIDTH VHYS TYP (V) 0.055 0.060 0.065 0.070 0.075 0.080 0.085 0.090 0.095 0.100 0.105 0.110 0.115 0.120 0.125 0.130 0.135 0.140 0.145 0.150 0.155 0.160 0.165 0.170 0.175 DETECTION VOLTAGE RANGE (V) 3.6V2.0% 3.7V2.0% 3.8V2.0% 3.9V2.0% 4.0V2.0% 4.1V2.0% 4.2V2.0% 4.3V2.0% 4.4V2.0% 4.5V2.0% 4.6V2.0% 4.7V2.0% 4.8V2.0% 4.9V2.0% 5.0V2.0% 5.1V2.0% 5.2V2.0% 5.3V2.0% 5.4V2.0% 5.5V2.0% 5.6V2.0% 5.7V2.0% 5.8V2.0% 5.9V2.0% 6.0V2.0%
CMOS IC
HYSTERESIS WIDTH VHYS TYP (V) 0.180 0.185 0.190 0.195 0.200 0.205 0.210 0.215 0.220 0.225 0.230 0.235 0.240 0.245 0.250 0.255 0.260 0.265 0.270 0.275 0.280 0.285 0.290 0.295 0.300
OUTPUT CONFIGURATIONS
Implementation With different power supplies With active low reset CPUs With active high reset CPUs With voltage divider variable resistors CMOS No Yes No No
Example with one power supply
VDD
V/D CMOS OUT CD Vss
CPU
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QW-R502-040,A
88CXX
TEST CIRCUITS
(1) VDD VDD 88CXX Series Vss
OUT
CMOS IC
(2)
ISS VDD
VDD
88CXX Series
OUT
CD
Vss CD
(3) VDD VDD 88CXX Series Vss OUT CD
(4) VDD VDD VDS 88CXX Series Vss OUT CD VDD+VDS
IOUT
IOUT
(5) VIH VDD P.G. 88CXX Series Vss OUT CD Oscilloscope VIL Output Voltage Vss Input Voltage
1
td VDD x90%
(a):VIH=6V, VIL=0.80V (b):VIH=10V, VIL=0.95V
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TECHNICAL TERMS
1. Detection voltage (-VDET)
CMOS IC
The detection voltage -VDET is the voltage at which the output switches to low. This detection voltage varies slightly among products of the same type. The variation of voltages between the specified minimum [(-VDET)min.] and maximum [(-VDET)max.] values is called the detection voltage range (See Figure 1). Example: For the -VDET=1.5V, detection voltage lies in the range of 1.470 (-VDET) 1.530. This means that -VDET is 1.470 in a product while -VDET is 1.530 in another of the same -VDET=1.5V. 2. Release voltage (+VDET) The release voltage +VDET is the voltage at which the output returns (is "released") to high. This release voltage varies slightly among products of the same type. The variation of voltages between the specified minimum [(+VDET)min.] and maximum [(+VDET)max.] values is called the release voltage range (See Figure 2). Example: For the -VDET=1.5V, the release voltage lies in the range of 1.514 (+VDET) 1.652. This means that +VDET is 1.514 in a product while +VDET is 1.652 in another of the same -VDET=1.5V. Remark: Although the detection voltage and release voltage overlap in the range of 1.514 V ~ 1.530 V, +VDET will always be larger than -VDET.
VD (-VDET)Max. (-VDET)Min. Detection voltage Voltage range Detection Release voltage (+VDET) Max. (+VDET) Min. VDD Release voltage range
OUT
OUT
Figure 1
3. Hysteresis width (VHYS)
Figure 2 (CD=0F)
The hysteresis width is the voltage difference between the detection voltage and the release voltage (B-A=VHYS in Figure 7). By giving a device hysteresis, trouble such as noise at the input is avoided. 4. Delay time (td) The delay time is a time that the input voltage to VDD terminal exceeds the release voltage (+VDET) and then the output of the OUT terminal inverts. The delay time can be changed by the additional external capacitor CD.
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V VDD +VDET OUT
CMOS IC
td Figure 3
5. Through-type current Through-type current refers to the current which flows instantaneously, at the time of detection and release of a voltage detector. Through-type current is large in CMOS output devices. 6. Oscillation In applications where a resistor is connected to the voltage detector input , in the CMOS active low products for example, the through-type current generated when the output goes from low to high (release) causes a voltage drop equal to [through-type current] [input resistance] across the resistor. When the resultant input voltage drops below the detection voltage -VDET, the output voltage returns to its low level. In this state, the through-type current and its resultant voltage drop have disappeared, and the output goes back from low to high. A through-type current is again generated, a voltage drop appears, and the process repeats. This unstable condition is referred to as oscillation.
STANDARD CIRCUIT
Connect directly the CD capacitor for delay between CD and Vss terminals
VDD CD Vss OUT
Figure 5
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OPERATION 1. Basic operation: CMOS active low output
CMOS IC
(1) When power supply voltage VDD is greater than the release voltage +VDET, the Nch transistor is OFF and the Pch transistor ON, causing VDD (high) to appear at the output. (2) When power supply voltage VDD goes below +VDET, the output maintains the power supply voltage level, as long as VDD remains above the detection voltage -VDET. When VDD does fall below -VDET (A in Figure 7), the Nch transistor goes ON the Pch transistor goes OFF, and VSS appears at the output. (3) When VDD falls below the minimum operating voltage, the output becomes undefined. However, output will revert to VDD if a pull-up has been employed. (4) VSS will again be output when VDD rises above the minimum operating voltage. VSS will continue to be output even when VDD surpasses -VDET, as long as it does not exceed the release voltage +VDET. (5) When VDD rises above +VDET (B in Figure 7), the Nch transistor goes OFF the Pch transistor goes ON, and VDD appears at the output. Then VDD at the OUT terminal appears with delay time (td) due to delay circuit.
VDD (1) (2) (3) (4) (5) VDD RA *
+ -
Hysteresis width(VHYS)
B A
Release voltage (+VDET) Detection voltage (-VDET) Min.operating voltage Vss
Delay circuit CD
Pch OUT * Nch
RB VREF RC N
VDD CD *Parasitic diode CD Vss td
Vss
OUT terminal output
Figure 6
Figure 7
2. Delay circuit
The delay circuit outputs the signal delayed from the release voltage (+VDET) point of the power voltage VDD rising. The output signal is not delayed when the VDD goes down the detection voltage (-VDET) or less. (See Figure 7). The delay time (td) is determined by the time constant of the built-in constant current (approx. 100nA in the case of products with detection voltage of 1.5V or more, approx. 570nA in the case of products with detection voltage of 1.4V or less) and the attached external capacitor (CD), and calculated from the following formula. td (ms) = Delay factorxCD (nF) Delay factor: (25 ) Products with detection voltage of 1.4V or less: Min.0.57, Typ.0.77, Max.0.96 Products with detection voltage of 1.5V or more: Min.3.8, Typ. 5.1, Max.6.4
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Cautions
CMOS IC
*The open of CD terminal may cause double pulses shown in Figure 8 at release. If the double pulses cause a trouble, attach 10pF or larger capacitor to the CD terminal. Do not apply the voltage to the CD terminal.
Time
Figure 8
*Layout the print circuit board not to apply or flow out the current to/from the CD terminal. Doing not so may cause inaccurate delay time. *Use an external capacitor, CD of which leakage current can be ignored for the built-in constant-current value. A leakage current may cause an error of delay time. Also, a leakage current over the built-in constant-current causes unrelease status.
3. Other characteristics
(1) Temperature characteristic of detection voltage. The temperature characteristics of the detection voltage are expressed by the oblique line parts in Figure 9.
-VDET (V) +0.54mV/ 1.500
-0.54mV/ -40 25 Figure 9
(2) Temperature characteristics of release voltage +VDEF The temperature factor ( detection voltage as follows:
+ V DET = Ta + VDET - VDET
85
Ta( )
Ta
) of the release voltage is calculated by the temperature factor of the
- V DET Ta
The temperature factor of the release voltage has a same sign characteristics as the temperature factor of the detection voltage. (3) Temperature characteristics of hysteresis voltage The temperature characteristics of hysteresis voltage ( +VDEF Ta -VDEF Ta ) is calculated as follows:
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+ V DET - V DET = Ta Ta VHYS -VDET - V DET Ta
CMOS IC
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TYPICAL PERFORMANCE CHARACTERISTICS
(1) Current consumption - Input voltage
-VDET=1.1V -VDET=1.4V
CMOS IC
Current consumption, Iss (A)
Current consumption, Iss (A)
15A
2.5 2.0 1.5 1.0 0.5 0.0 2 4 5
Ta=25
2.5 2.0 1.5 1.0 0.5 0.0 0
18A
Ta=25
0
1
3
6
7
8
1
2
3
4
5
6
7
8
Input voltage, VDD (V)
-VDET=1.5V
Input voltage, VDD (V)
-VDET=6.0V
Current consumption, Iss (A)
2.5 2.0 1.5 1.0 0.5 0.0 0 2
3.4A
Ta=25
Current consumption, Iss (A)
12.9A
2.5 2.0 1.5 1.0 0.5 0.0
Ta=25
4
6
8
10
12
0
2
4
6
8
10
12
Input voltage, VDD (V)
Input voltage, VDD (V)
(2) Pch transistor output current - VDS
Pch transistor output current, IOUT (mA) -VDET=1.5V 30 25 20 VDD=7.2V 15 10 5 0 0 2 VDD=6.0V VDD=4.8V VDD=3.6V VDD=2.4V 4 VDS (V) 6 8 10 Ta=25 VDD=8.4V
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TYPICAL PERFORMANCE CHARACTERICS (Cont.)
(3) Nch transistor output current (IOUT) - VDS
Pch transistor output current, IOUT (mA) -VDET=6.0V 60 Ta=25 50 VDD=6.0V 40 30 20 10 0 VDD=1.2V 0 1 2 VDS (V) VDD=4.8V
CMOS IC
VDD=3.6V VDD=2.4V 3 4 5
(4) Nch transistor output current - Input voltage
-VDET=1.4V -VDET=6.0V VDS=0.5V 15
IOUT (mA)
3.5
20
Nch transistor output current
3 2.5
IOUT (mA)
Nch transistor output current
VDS=0.5V Ta=-40 Ta=25 Ta=85
Ta=-40 Ta=25
2 1.5 1 0.5 0 0 0.5 1 1.5
10
Ta=85
5
2
0
0
2
4
6
8
Input voltag VDD (V)
Input voltag VDD (V)
(5) Pch transistor output current- Input voltage
-VDET=1.1V -VDET=6.0V
Pch transistor output current,
Pch transistor output current,
3 2.5
VDS=0.5V Ta=-40
5.0 4.0 IOUT (mA) 3.0 2.0
VDS=0.5V
Ta=-40
Ta=25
IOUT (mA)
2 1.5 1 0.5 0 0 1.0 2 2.5 Input voltage, VDD (V) 1.5 3 Ta=25
Ta=85
Ta=85 1.0 0.0
0
2
4
6
8
10
12
Input voltage, VDD (V)
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TYPICAL PERFORMANCE CHARACTERICS (Cont.)
(6) Dynamic response (CD : Open)
-VDET = 1.1V Ta=25 tPHL 0.1
Response time (ms)
CMOS IC
1
Response time (ms)
1
-VDET = 1.4V Ta=25 tPHL
0.1
0.01
tPLH
0.01
tPLH
0.001 0.0001
0.001
0.01
0.1
0.001 0.0001
0.001
0.01
0.1
Load capacitance ( F)
Load capacitance ( F)
1
-VDET = 1.5V Ta=25
1
-VDET = 1.1V Ta=25 tPHL
Response time (ms)
0.1
tPHL
Response time (ms)
0.1 tPLH 0.01
tPLH 0.01
0.001 0.0001
0.001 0.01 Load capacitance ( F)
0.1
0.001 0.0001
0.001 0.01 Load capacitance ( F)
0.1
Response Time Measure Circuit
VDD OUT
VDD V
UTC 88CXX
Vs
V
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CMOS IC
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CMOS IC
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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